DSP MCU crack

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EEPROM programming algorithm for DSP MCU crack technology
Source: On the basis of IC decryption characteristics, we can choose the most secure and reasonable decryption scheme for MCU crack. (Note: DSPIC30F series chip decryption for example) 1. Data EEPROM programming is similar to program memory, EEPROM storage block is accessed by reading and writing table operations. Because EEPROM memory has only 16 bit width, its operation does not require TBLWTH and TBLRDH instructions. The programming and erasing steps of data EEPROM are similar to those of flash memory, but the difference is that data EEPROM is optimized for fast data access. On data EEPROM, you can perform the following programming operations: erase a word erase a line (16 words) program a word program a line (16 words) in normal operation (the entire VDD range of work), data EEPROM readable and writable. Unlike flash memory, normal program execution does not stop when EEPROM is programmed or erased. EEPROM erasure and programming operations are performed through NVMCON and NVMKEY registers. The programming software is responsible for waiting for the operation to complete. Software can detect the completion time of an EEPROM erasure or programming operation by one of three methods: querying the WR bit with software (NVMCON < 15 >). When the operation is completed, the WR bit will be cleared. Query NVMIF bit (IFS0<12>) with software. When the operation is completed, the NVMIF bit will be set to 1. NVM interrupt is allowed. When the operation is completed, the CPU will be interrupted. ISR can handle more programming operations. Two, EEPROM single word programming algorithm 1. erase a EEPROM word. Set the NVMCON register to erase a EEPROM word. The addresses of the erased characters are written to the TBLPAG and NVMADR registers. Clear the NVMIF status bit and allow NVM interrupt (optional). Write the key sequence to NVMKEY. The WR position is 1. This will start the erase cycle. Query WR bit or wait for NVM interrupt. 2. write the data word to the data EEPROM to write the latch. 3. programming data words into EEPROM. Set the NVMCON register to program a EEPROM word. Clear the NVMIF status bit and allow NVM interrupt (optional). Write the key sequence to NVMKEY. The WR position is 1. This will start the programming cycle. Query WR bit or wait for NVM interrupt. 3. EEPROM line programming algorithm, if you need to program more than one word into EEPROM, each erase and program 16 words (1 line) will be faster. The process of programming 16 words to EEPROM is as follows: 1. Read a row of data EEPROM (16 words) and save it to data RAM in the way of data “mirror”. The EEPROM part to be modified must be in the even 16 word address boundary. 2. update data mirroring with new data. 3. erase EEPROM rows. Set the NVMCON register to erase one row of EEPROM. Clear the NVMIF status bit and allow NVM interrupt (optional). Write the key sequence to NVMKEY. The WR position is 1. This will start the erase cycle. Query WR bit or wait for NVM interrupt. 4. write 16 data words to the data EEPROM to write the latch. 5. programming a row of data to data EEPROM. Set the NVMCON register to program a line of EEPROM. Clear the NVMIF status bit and allow NVM interrupt (optional). Write the key sequence to NVMKEY. The WR position is 1. This will start the programming cycle. Query WR bit or wait for NVM interrupt.

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